Faculty
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SONG Cheng

Professor:Professor
Tel:86-10-62781275
E-mail:songcheng@mail.tsinghua.edu.cn
Address:Tsinghua University, School of Materials Science and Engineering, Beijing 100084, China
Welcome to join Spintronics group (Ph.D students, poctdoc.), please send email to songcheng@mail.tsinghua.edu.cn

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Education

2004/09-2009/01 Tsinghua University, Material Science and Engineering, Ph.D
2000/09-2004/06 Central South University, Material Science and Engineering, Bachelor


 

 

 


 

Professional experience

2021/6-present      Tsinghua University, School of Materials Science and Engineering, Professor
2017/12-2021/6    Tsinghua University, School of Materials Science and Engineering, Associate Professor (Tenured)
2011/10-2017/12  Tsinghua University, Dept. Materials Science and Engineering, Lecturer, Associate Professor (Tenure Track)
2009/03-2011/08  University of Regensburg (Germany), Dept. Physics, Research Assistant Humboldt Research Fellow


Course teaching
  • Undergraduate students course: Fundamental Materials Science

    High-quality courses of Tsinghua University
    2020.12 (teaching relevant content) win Second-class award of Teaching competition for young teachers in Tsinghua

  • Graduate students course: Spintronic Materials and Devices
    2014.12 (teaching relevant content) win Second-class award of Teaching competition for young teachers in Tsinghua

Research interest

• Magnetic Films and Spintronics
The present research interest includes: Antiferromagnet spintronics, Multi-field control of magnetism (Electric field, current, photon, and heat).
At present there are 2 engineers, 1 postdoc., 15 PhD candidates (including 3 co-supervised students and 2 exchange students), 1 master student, 4 undergraduate students working in the spintronic materials and devices group.
Spintronics become an extensively investigated field in the materials physics and electronics community with the main purpose of usage of electron spins in information technology. Either using the spin alone or adding the spin to traditional charge-based devices has the potential advantages of nonvolatility, higher integration density and data processing speed, as well as lower power consumption, compared with conventional electronic devices. 

 

Main Research Funding

Title: Spin Acoustic Electronics; Source: Beijing Natural Science Foundation, 2020/10-2023/12
Title: Electrical control of antiferromagnetic Mn2Au films and relevant tunneling junctions; Source: the National Science Foundation of China, 2019/01-2022/12
Title: New type of ferromagnetic semiconductors and their multi-field manipulation; Source: the Ministry of Science and Technology of China, 2017/8-2021/07
Title: Manipulation of antiferromagnetic-ferromagnetic transition in FeRh; Source: the National Science Foundation of China, 2017/01-2020/12
Title: Size effect of resistive switching random memory; Source: the Ministry of Science and Technology of China, 2016/06-2021/05
Title: Spintronic materials and devices; Source: the National Science Fund for Excellent Young Scholars, 2014/01-2016/12
Title: Key technology for high-density information storage and key materials for magneto-electronics; Source: the Ministry of Science and Technology of China, 2014/01-2016/12
Title: Formation mechanism of metallic conductive filaments in redox resistive random access memory. Source: National Natural Science Foundation of China, 2013/01-2017/12
Title: Electrical control of ferromagnetism in heterostructured films and its intrinsic mechanisms; Source: National Natural Science Foundation of China, 2013/01-2015/12


Awards/Honors

2020 Beijing Outstanding Youth Fund
2019 Excellent User for the 10th Anniversary of Shanghai Synchrotron Radiation Facility
2018 Second-class award of National Science and Technology Progress Award
2018 Second-class award of Beijing Municipality for Science and Technology Award
2016 Young Yangtze river scholars
2015 Excellent supervisor of "Challenge Cup" National Science and Technology College of extra-curricular academic competition works
2015 Liubing award of Tsinghua University
2014 Second-class award of young teacher teaching competition of Tsinghua University
2012 Second-class award of the state natural science award
2011 First-class award of natural science of the Ministry of Education

Publications

   More than 200 papers are published on functional antiferromagnet, electrical-control of ferromagnetism, Spin Hall effect and spin injection devices, including papers in Nature Mater., Nature Commun. Phys. Rev. Lett., Adv. Mater, Prog. Mater. Sci., and Mater. Sci. & Eng. R.,. Sum of times cited of these papers is >8000 according to Google Scholar, H-index=46.
Main published papers:
1. X. Chen, S. Shi, G. Shi, X. Fan, C. Song*, X. Zhou, H. Bai, L. Liao, Y. Zhou, H. Zhang, A. Li, Y. Chen, X. Han, S. Jiang, Z. Zhu, H. Wu, X. Wang, D. Xue, H. Yang*, and F. Pan*. Observation of the antiferromagnetic spin Hall effect. Nature Mater. 20, 800 (2021).
2. Cheng Song*, Ruiqi Zhang, Liyang Liao, Yongjian Zhou, Xiaofeng Zhou, Ruyi Chen, Yunfeng You, Feng Pan. Spin-orbit torques: materials, mechanisms, performances, and potential application. Prog. Mater. Sci. 118, 100761 (2021)
3. Ruyi Chen, Qirui Cui, Liyang Liao, Yingmei Zhu, Ruiqi Zhang, Hua Bai, Yongjian Zhou, Guozhong Xing, Feng Pan, Hongxin Yang*, Cheng Song*. Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets. Nature Commun. 12, 3113 (2021)
4. Leilei Qiao, Cheng Song*, Yiming Sun, Muhammad Umer Fayaz, Tianqi Lu, Siqi Yin, Chong Chen, Huiping Xu, Tian-Ling Ren, Feng Pan*. Observation of Negative Capacitance in Antiferroelectric PbZrO3 Films. Nature Commun. DOI: 10.1038/s41467-021-24530-w
5. Wenxuan Zhu, Cheng Song*, Yongjian Zhou, Qian Wang, Hua Bai, and Feng Pan*, Insight into interlayer magnetic coupling in 1T-type transition metal dichalcogenides based on the stacking of nonmagnetic atoms. Phys. Rev. B 103, 224404 (2021).
6. Youdi Gu*, Cheng Song*, Qian Wang, Weijin Hu, Wei Liu, Feng Pan, and Zhidong Zhang, Emerging opportunities for voltage-driven magneto-ionic control in ferroic heterostructures. APL Mater. 9, 040904 (2021)
7. R. Y. Chen#, Y. Gao#, X. C. Zhang, R. Q. Zhang, S. Q. Yin, X. Z. Chen, X. F. Zhou,Y. J. Zhou, J. Xia, Y. Zhou, S. G. Wang, F. Pan, Y. Zhang,* and C. Song*. Realization of Isolated and High-Density Skyrmions at Room Temperature in Uncompensated Synthetic Antiferromagnets. Nano Lett. 20, 3299-3305 (2020).
8. Y. M. Sun, C. Song*, S. Q. Yin, L. L. Qiao, Q. Wan, R. Wang, F. Zeng, and F. Pan*. Design of a Controllable Redox-Diffusive Threshold Switching Memristor. Adv. Electron. Mater. 6, 2000695 (2020)
9. Y. D. Gu, C. Song*, Q. H. Zhang, F. Li, H. X. Tan, K. Xu, J. Li, M. S. Saleem, M. U. Fayaz, J. J. Peng, F. X. Hu, L. Gu, W. Liu*, Z. D. Zhang, and F. Pan. Interfacial Control of Ferromagnetism in Ultrathin SrRuO3 Films Sandwiched between Ferroelectric BaTiO3 Layers. ACS Appl. Mater. Interfaces 12, 6707−6715 (2020).
10. Y. M. Sun, C. Song*, S. Q. Yin, L. L. Qiao, Q. Wan, J. L. Liu, R. Wang, F. Zeng and F. Pan*. Cluster-Type Filaments Induced by Doping in Low-Operation-Current CBRAM. ACS Appl. Mater. Interfaces. 12, 29481-29486 (2020)
11. Y. J. Zhou#, C. Y. Guo#, C. H. Wan, X. Z. Chen, X. F. Zhou, R. Q. Zhang, Y. D. Gu, R. Y. Chen, H. Q. Wu, X. F. Han, F. Pan, and C. Song*. Current-Induced In-Plane Magnetization Switching in a Biaxial Ferrimagnetic Insulator. Phys. Rev. Appl. 13, 064051 (2020).
12. X. F. Zhou, X. Z. Chen, Y. F. You, L. Y. Liao, H. Bai, R. Q. Zhang, Y. J. Zhou, H. Q. Wu, C. Song*, and F. Pan. Exchange Bias in Antiferromagnetic Mn3Sn Monolayer Films. Phys. Rev. Appl. 14, 054037 (2020)
13. R. Q. Zhang, L. Y. Liao, X. Z. Chen, T. Xu, L. Cai, M. H. Guo, Hao Bai, L. Sun, F. H. Xue, J. Su, X. Wang, C. H. Wan, Hua Bai, Y. X. Song, R. Y. Chen, N. Chen, W. J. Jiang, X. F. Kou, J. W. Cai, H. Q. Wu, F. Pan, and C. Song*. Current-induced magnetization switching in CoTb amorphous single layer. Phys. Rev. B 101, 214418 (2020).
14. Z. M. Jin*, S. Y. Ruan, X. F. Zhou, B. J. Song, C. Song*, X. Z. Chen, F. Pan, Y. Peng, C. Zhang, G. H. Ma*, Y. M. Zhu*, and S. L. Zhuang, Ultrafast electron transport in metallic antiferromagnetic Mn2Au thin films probed by terahertz spectroscopy. Phys. Rev. B 102, 014438 (2020).
15. L. Y. Liao, Z. Y. Zhou, Y. J. Zhou, W. X. Zhu, F. Pan, and C. Song*. Charge-magnon conversion at the topological insulator/antiferromagnetic insulator interface. Phys. Rev. B 102, 115152 (2020)
16. W. X. Zhu, C. Song*, L. Y. Liao, Z. Y. Zhou, H. Bai, Y. J. Zhou, F. Pan*, Quantum anomalous Hall insulator state in ferromagnetic ordered MnBi2Te4/VBi2Te4 heterostructures. Phys. Rev. B 102, 085111 (2020).
17. M. S. Saleem, C. Song*, Y. D. Gu, R. Y. Chen, M. U. Fayaz, Y. M. Hao, and F. Pan*, Orientation control of oxygen vacancy channels in brownmillerite SrFeO2.5, Phys. Rev. Mater. 4, 014403 (2020).
18. R. Y. Chen, R. Q. Zhang, Y. J. Zhou, H. Bai, F. Pan, and C. Song*, Magnetic field direction dependence of topological Hall effect like features in synthetic ferromagnetic and antiferromagnetic multilayers. Appl. Phys. Lett. 116, 242403 (2020).
19. H. Bai, W. X. Zhu, Y. F. You, X. Z. Chen, X. F. Zhou, F. Pan, and C. Song*. Size-dependent anomalous Hall effect in noncollinear antiferromagnetic Mn3Sn films. Appl. Phys. Lett. 117, 052404 (2020)
20. R. Q. Zhang, G. Y. Shi, J. Su, Y. X. Shang, J. W. Cai, L. Y. Liao, F. Pan, and C. Song*. Tunable spin-orbit torque switching in antiferromagnetically coupled CoFeB/Ta/CoFeB. Appl. Phys. Lett. 117, 212403 (2020)
21. Y. F. You, H. Bai, X. Z. Chen, Y. J. Zhou, X. F. Zhou, F. Pan, and C. Song*. Room Temperature Anomalous Hall Effect in Antiferromagnetic Mn3SnN films. Appl. Phys. Lett. 117, 222404 (2020)
22. H. Bai, X. F. Zhou, Y. J. Zhou, X. Z. Chen, Y. F. You, F. Pan, and C. Song*. Functional antiferromagnets for potential applications on high density storage and high frequency. J. Appl. Phys. 128, 210901 (2020)
23. Y. J. Zhou, X. Z. Chen, X. F. Zhou, H. Bai, R. Y. Chen, F. Pan and C. Song*. A comparative study of spin Hall magnetoresistance in Fe2O3-based systems. J. Appl. Phys. 127, 163904 (2020).
24. L. Han, C. Song*, and F. Pan. Formation and Annihilation of Multi-antiskyrmion Defects during Skyrmion Nucleation. J. Appl. Phys. 128, 183903 (2020).
25. Y. Y. Wang*, M. M. Decker, T.N.G. Meier, X. Z. Chen, C. Song, T. Grünbaum, W. S. Zhao, J. Y. Zhang, L. Chen*, and C. H. Back, Spin pumping during the antiferromagnetic–ferromagnetic phase transition of iron–rhodium, Nat. Commun. 11, 275 (2020)
26. Z. D. Wang, M. H. Guo, H.-A. Zhou, L. Zhao, T. Xu, R. Tomasello, H. Bai, Y. Q. Dong, S.-G. Je, W. L. Chao, H.-S. Han, S. Lee, K.-S. Lee, Y. Y. Yao, W. Han, C. Song, H. Q. Wu, M. Carpentieri, G. Finocchio, M.-Y. Im, S.-Z. Lin* and W. J. Jiang*. Thermal generation, manipulation and thermoelectric detection of skyrmions. Nat. Electron. DOI: 10.1038/s41928-020-00489-2
27. X. Z. Chen#, X. F. Zhou#, R. Cheng#, C. Song*, J. Zhang, Y. C. Wu, Y. Ba, H. B. Li, Y. M. Sun, Y. F. You, Y. G. Zhao and F. Pan*, Electric field control of Néel spin-orbit torque in an antiferromagnet. Nat. Mater. 18, 931−935 (2019).
28. Y. M. Sun, X. L. Zhao, C. Song*, K. Xu, Y. Xi, J. Yin, Z. Y. Wang, X. F. Zhou, X. Z. Chen, G. Y. Shi, H. B. Lv, Q. Liu, F. Zeng, X. Y. Zhong, H. Q. Wu, M. Liu, and F. Pan*, Performance Enhancing Selector via Symmetrical Multilayer Design, Adv. Funct. Mater. 29, 1808376 (2019).
29. Y. F. You, X. Z. Chen, X. F. Zhou, Y. D. Gu, R. Q. Zhang, F. Pan and C. Song*. Anomalous Hall Effect-like Behavior with In-plane Magnetic Field in Noncollinear Antiferromagnetic Mn3Sn Films. Adv. Electron. Mater. 2019, 5, 1800818.
30. X. F. Zhou, X. Z. Chen, J. Zhang, F. Li, G. Y. Shi, Y. M. Sun, M. S. Saleem, Y. F. You, F. Pan, and C. Song*, From field-like torque to antidamping torque in antiferromagnetic Mn2Au. Phys. Rev. Appl. 11, 054030 (2019)
31. X. Z. Chen, H. Liu, L. F. Yin, C. Song*, Y. Z. Tan, X. F. Zhou, F. Li, Y. F. You, Y. M. Sun, and F. Pan*, Electrical control of anisotropic ferromagnetic domains during antiferromagnetic-ferromagnetic phase transition, Phys. Rev. Appl. 11, 024021 (2019)
32. R. Q. Zhang, L. Y. Liao, X. Z. Chen, H. Q. Wu, F. Pan, and C. Song*, Strong magnetoresistance modulation by Ir insertion in a Ta/Ir/CoFeB trilayer. Phys. Rev. B 100, 144425 (2019).
33. R. Q. Zhang, J. Su, J. W. Cai, G. Y. Shi, F. Li, L. Y. Liao, F. Pan, and C. Song*, Spin valve effect induced by spin-orbit torque switching. Appl. Phys. Lett. 114, 092404 (2019).
34. X. F. Zhou, B. J. Song X. Z. Chen, Y. F. You, S. Y. Ruan, H. Bai, W. J. Zhang, G. H. Ma, J. Q. Yao, F. Pan, Z. M. Jin*, and C. Song*, Orientation-dependent THz emission in non-collinear antiferromagnetic Mn3Sn and Mn3Sn-based heterostructures. Appl. Phys. Lett. 115, 182402 (2019)
35. R. Y. Chen, R. Q. Zhang, L. Y. Liao, X. Z. Chen, Y. J. Zhou, Y. D. Gu, M. S. Saleem, X. F. Zhou, F. Pan, and C. Song*, Magnetic field direction dependent magnetization reversal in synthetic antiferromagnets. Appl. Phys. Lett. 115, 132403 (2019).
36. Y. M. Sun, C. Song*, J. Yin, L. L. Qiao, R. Wang, Z. Y. Wang, X. Z. Chen, S. Q. Yin, M. S. Saleem, H. Q. Wu, F. Zeng, and F. Pan*, Modulating metallic conductive filaments via bilayer oxides in resistive switching memory. Appl. Phys. Lett. 114, 193502 (2019).
37. M. S. Saleem, B. Cui, C. Song*, Y. M. Sun, Y. D. Gu, R. Q. Zhang, M. U. Fayaz, X. F. Zhou, P. Werner, S.S.P. Parkin, and F. Pan*, Electric field control of phase transition and tunable resistive switching in SrFeO2.5, ACS Appl. Mater. Interfaces, 11, 6581−6588 (2019)
38. Y. D. Gu, K. Xu, C. Song*, X. Y. Zhong, H. R. Zhang, H. J. Mao, M. S. Saleem, J. R. Sun, W. Liu*, Z. D. Zhang, F. Pan, and J. Zhu, Oxygen Valve Formed in Cobaltite-Based Heterostructures by Ionic Liquid and Ferroelectric Dual-Gating. ACS Appl. Mater. Interfaces, 11, 19584−19595 (2019)
39. S. Q. Yin, C. Song*, Y. M. Sun, L. L. Qiao, B. L. Wang, Y. F. Sun, K. Liu, F. Pan, and X. Z. Zhang*, Electric and Light Dual-Gate Tunable MoS2 Memtransistor. ACS Appl. Mater. Interfaces 2019, 11, 43344−43350
40. X. Z. Chen, R. Zarzuela, J. Zhang, C. Song*, X. F. Zhou, G. Y. Shi, F. Li, H. A. Zhou, W. J. Jiang, F. Pan, and Y. Tserkovnyak, Antidamping-Torque-Induced Switching in Biaxial Antiferromagnetic Insulators. Phys. Rev. Lett. 120, 207204 (2018) (ESI highly cited paper).
41. P. X. Zhang, L. Y. Liao, G. Y. Shi, R. Q. Zhang, H. Q. Wu, Y. Y. Wang, F. Pan, and C. Song*, Spin-orbit torque in completely compensated synthetic antiferromagnet. Phys. Rev. B 97, 214403 (2018).
42. X. F. Zhou, J. Zhang, F. Li, X. Z. Chen, G. Y. Shi, Y. Z. Tan, Y. D. Gu, M. S. Saleem, H. Q. Wu, F. Pan, and C. Song*, Strong Orientation-Dependent Spin-Orbit Torque in Thin Films of the Antiferromagnet Mn2Au. Phys. Rev. Appl. 9, 054028 (2018)
43. C. Song*, Y. F. You, X. Z. Chen, X. F. Zhou, Y. Y. Wang and F. Pan. How to manipulate magnetic states of antiferromagnets. Nanotechnology 29, 112001 (2018)
44. C. Song*, B. Cui, F. Li, X. J. Zhou, F. Pan, Recent progress in voltage control of magnetism: Materials, mechanisms, and performance. Prog. Mater. Sci. 87, 33–82 (2017). (ESI highly cited paper)
45. X. Z. Chen, J. F. Feng, Z. C. Wang, J. Zhang, X. Y. Zhong, C. Song*, L. Jin, B. Zhang, F. Li, M. Jiang, Y. Z. Tan, X. J. Zhou, G. Y. Shi, X. F. Zhou, X. D. Han, S. C. Mao, Y. H. Chen, X. F. Han, F. Pan*. Tunneling anisotropic magnetoresistance driven by magnetic phase transition. Nat. Commun. 8, 449 (2017)
46. F. Li, C. Song*, B. Cui, J. J. Peng, Y. D. Gu, G. Y. Wang, and F. Pan*. Photon-gated spin transistor, Adv. Mater. 29, 1604052 (2017).
47. B. Cui, C. Song*, F. Li, X. Y. Zhong, Z. C. Wang, P. Werner, Y. D. Gu, H. Q. Wu, J. J. Peng, M. S. Saleem, S. S. P. Parkin, and F. Pan*, Electric-field control of oxygen vacancy and magnetic phase transition in cobaltite/manganite bilayer. Phys. Rev. Appl. 8, 044007 (2017)
48. G. Y. Shi, C. H. Wan, Y. S. Chang, F. Li, X. J. Zhou, P. X. Zhang, J. W. Cai*, X. F. Han, F. Pan, and C. Song*. Spin-orbit torque in MgO/CoFeB/Ta/CoFeB/MgO symmetric structure with interlayer antiferromagnetic coupling. Phys. Rev. B, 95, 104435 (2017)
49. F. Li, C. Song*, Y. D. Gu, M. S. Saleem, and F. Pan.* Chemical modulation of electronic structure at the excited state. Phys. Rev. B, 96, 245108 (2017)
50. X. J. Zhou, G. Y. Shi, J. H. Han, Q. H. Yang, Y. H. Rao, H. W. Zhang, L. L. Lang, S. M. Zhou, F. Pan, and C. Song*. Lateral transport properties of thermally excited magnons in yttrium iron garnet films. Appl. Phys. Lett. 110, 062407 (2017)
51. M. S. Saleem, C. Song*, J. J. Peng, B. Cui, F. Li, Y. D. Gu, and F. Pan*. Metal-insulator-metal transition in NdNiO3 films capped by CoFe2O4. Appl. Phys. Lett. 110, 072406 (2017)
52. M. Decker, M. S. Wörnle, A. Meisinger, M. Vogel, H. S. Körner, G. Y. Shi, C. Song, M. Kronseder, C.H. Back. Time resolved measurements of the switching trajectory of Pt/Co elements induced by spin-orbit torques. Phys. Rev. Lett. 118, 257201 (2017).
53. B. Cui, C. Song*, H. J. Mao, Y. N. Yan, F. Li, S. Gao, J. J. Peng, F. Zeng, and F. Pan*. Manipulation of electric field effect by orbital switch. Adv. Funct. Mater. 26, 753–759 (2016).
54. Y. N. Yan, C. H. Wan, X. J. Zhou, G. Y. Shi, B. Cui, J. H. Han, Y. H. Fan, X. F. Han, Kang L. Wang, F. Pan, and C. Song*. Strong electrical manipulation of spin-orbit torque in ferromagnetic heterostructures. Adv. Electron. Mater. 2, 1600219 (2016).
55. J. H. Han, G. Y. Shi, X. J. Zhou, Q. H. Yang, Y. H. Rao, G. Li, H. W. Zhang, F. Pan, and C. Song*, Vertical Spin Hall Magnetoresistance in Ta1–xPtx/YIG Bilayers, Phys. Rev. B 94, 134406 (2016)
56. B. Cui, F. Li, C. Song*, J. J. Peng, M. S. Saleem, Y. D. Gu, S. N. Li, K. L. Wang, and F. Pan*. Insight into the antiferromagnetic structure manipulated by electronic reconstruction. Phys. Rev. B 94, 134403 (2016)
57. F. Li, C. Song*, Y. Y. Wang, B. Cui, H. J. Mao, J. J. Peng, S. N. Li, and F. Pan*. Optical control of magnetism in manganite films. Phys. Rev. B 93, 024406 (2016)
58. J. J. Peng, C. Song*, F. Li, Y. D. Gu, G. Y. Wang, and F. Pan*. Restoring the magnetism of ultrathin LaMnO3 films by surface symmetry engineering. Phys. Rev. B 94, 214404 (2016)
59. J. J. Peng, C. Song*, M. Wang, F. Li, B. Cui, G. Y. Wang, P. Yu, and F. Pan*. Manipulating the metal-to-insulator transition of NdNiO3 films by orbital polarization. Phys. Rev. B 93, 235102 (2016)
60. M. Jiang, X. Z. Chen, X. J. Zhou, B. Cui, Y. N. Yan, H. Q. Wu*, F. Pan, and C. Song*. Electrochemical control of the phase transition of ultrathin FeRh films. Appl. Phys. Lett. 108, 202404 (2016).
61. W. Liu, H. Zhang, J. Shi, Z. Wang, C. Song, X. Wang, S. Lu, X. Zhou, L. Gu, D. V. Louzguine-Luzgin, M. Chen, K. Yao and Na Chen*. A room-temperature magnetic semiconductor from a ferromagnetic metallic glass. Nat. Commun. 7, 13497 (2016).
62. Y. Y. Wang, X. Zhou, C. Song*, Y. N. Yan, S. M. Zhou G. Y. Wang, C. Chen, F. Zeng, F. Pan*, Electrical control of exchange spring in antiferromagnetic metals. Adv. Mater. 27, 3196–3201 (2015).
63. B. Cui, C. Song*, H. Mao, H. Wu, F. Li, J. Peng, G. Wang, F. Zeng, and F. Pan*, Magnetoelectric coupling induced by interfacial orbital reconstruction. Adv. Mater. 27, 6651–6656 (2015).
64. B. Cui, C. Song*, G. A. Gehring, F. Li, G. Wang, C. Chen, J. Peng, H. Mao, F. Zeng, and Feng Pan*. Electrical manipulation of orbital occupancy and magnetic anisotropy in manganites. Adv. Funct. Mater. 25, 864–870 (2015). (was selected as ESI highly cited paper)
65. Y. N. Yan, X. J. Zhou, F. Li, B. Cui, Y. Y. Wang, G. Y. Wang, F. Pan, and C. Song*, Electrical control of Co/Ni magnetism adjacent to gate oxides with low oxygen ion mobility. Appl. Phys. Lett. 107, 122407 (2015).
66. J. J. Peng, C. Song*, B. Cui, F. Li, H. J. Mao, G. Y. Wang, and F. Pan*. Manipulation of orbital occupancy by ferroelectric polarization in LaNiO3/BaTiO3-δ heterostructures. Appl. Phys. Lett. 107, 182904 (2015).
67. J. J. Peng, C. Song*, F. Li, B. Cui, H. J. Mao, Y. Y. Wang, G. Y. Wang, and F. Pan*. Charge Transfer and Orbital Reconstruction in strain-engineered (La,Sr)MnO3/LaNiO3 Heterostructures. ACS Appl. Mater. Interfaces 7, 17700–17706 (2015).
68. Y. Y. Wang, C. Song*, G. Y. Wang, J. H. Miao, F. Zeng, and F. Pan*. Antiferromagnet controlled tunneling magnetoresistance. Adv. Funct. Mater. 24, 6806–6810 (2014)
69. B. Cui, C. Song*, G. Y. Wang, Y. N. Yan, J. J. Peng, J. H. Miao, H. J. Mao, F. Li, C. Chen, F. Zeng, and F. Pan*. Reversible ferromagnetic phase transition in electrode-gated manganites. Adv. Funct. Mater. 24, 7233–7240 (2014). (Front cover paper)
70. J. H. Han, C. Song*, S. Gao, Y. Y. Wang, C. Chen, and F. Pan. Realization of the Meminductor. ACS Nano, 8, 10043–10047 (2014).
71. J. J. Peng, C. Song*, B. Cui, F. Li, H. J. Mao, Y. Y. Wang, G. Y. Wang, and F. Pan*. Exchange bias in a single LaMnO3 film induced by vertical electronic phase separation. Phys. Rev. B 89, 165129 (2014).
72. J. H. Han, C. Song*, F. Li, Y. Y. Wang, G. Y. Wang, Q. H. Yang, and F. Pan. Antiferromagnet-controlled spin current transport in SrMnO3/Pt hybrids. Phys. Rev. B, 90, 144431 (2014)
73. B. Cui, C. Song*, Y. Sun, Y. Y. Wang, Y. L. Zhao, F. Li, G. Y. Wang, F. Zeng, and F. Pan*. Exchange bias field induced symmetry-breaking of magnetization rotation in two-dimension. Appl. Phys. Lett. 105, 152402 (2014)
74. Y. Y. Wang, C. Song*, G. Y. Wang, F. Zeng, and F. Pan*. Evidence for asymmetric rotation of spins in antiferromagnetic exchange-spring. New J. Phys. 16, 123032 (2014).
75. F. Pan, S. Gao, C. Chen, C. Song, F. Zeng. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance. Mater. Sci. & Eng. R 83, 1–59 (2014) (ESI highly cited paper)
76. Y. Y. Wang, C. Song*, G. Y. Wang, F. Zeng, and F. Pan*. Insensitivity of tunneling anisotropic magnetoresistance to non-magnetic electrodes. Appl. Phys. Lett., 103, 202403 (2013).
77. S. Gao, C. Song*, C. Chen, F. Zeng, and F. Pan*. Formation process of conducting filament in planar organic resistive memory. Appl. Phys. Lett., 102, 141606 (2013).
78. G. Chen, C. Song*, C. Chen, S. Gao, F. Zeng, F. Pan*. Resistive switching and magnetic modulation in cobalt-doped ZnO. Adv. Mater., 24, 3515 (2012). (was selected as ESI highly cited paper)
79. Y. Y. Wang, C. Song*, B. Cui, G. Y. Wang, F. Zeng, F. Pan*. Room-temperature perpendicular exchange coupling and tunneling anisotropic magnetoresistance in antiferromagnet-based tunnel junction. Phys. Rev. Lett., 109, 137201 (2012).
80. C. Song*, Y. Y. Wang, X. J. Li, G. Y. Wang, F. Pan*. Interlayer magnetostatic coupling and linear magnetoresistance in [Pd/Co]/MgO/Co junction sensor. Appl. Phys. Lett., 101, 062404 (2012).
81. D. C. Lin, C. Song*, B. Cui, Y. Y. Wang, G. Y. Wang, F. Pan. Giant coercivity in perpendicularly magnetized cobalt monolayer. Appl. Phys. Lett., 101, 112405 (2012).
82. C. Chen, C. Song*, J. Yang, F. Zeng, F. Pan*. Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure. Appl. Phys. Lett., 100, 253509 (2012).
83. S. Gao, C. Song*, C. Chen, F. Zeng, F. Pan*. Dynamic processes of resistive switching in metallic filament based organic memory devices. J. Phys. Chem. C, 116(33), 17955 (2012).
84. M. Ehlert, C. Song, M. Ciorga, M. Utz, D. Schuh, D. Bougeard, and D. Weiss. All-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes. Phys. Rev. B, 86, 205204 (2012).
85. C. Song, M. Sperl, M. Utz, M. Ciorga, G. Woltersdorf, D. Bougeard, A. Einwanger, C. H. Back, D. Weiss*. Proximity induced enhancement of the Curie temperature in hybrid spin injection devices. Phys. Rev. Lett., 107, 056601 (2011).

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